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For magnetic devices and systems, their electron transport properties are strongly dependent on the atomic smoothness of their surfaces and interfaces, while for semiconducting devices and systems, their transport properties are controlled by a depletion layer, which can be intrinsically formed at their interfaces against a metallic layer with the thickness between a few nm (e.g., InAs) and a ...
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The contributions of researchers at a global level in the journal Electronics in the period 2012–2020 are analyzed. The objective of this work is to establish a global vision of the issues ...
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For magnetic devices and systems, their electron transport properties are strongly dependent on the atomic smoothness of their surfaces and interfaces, while for semiconducting devices and systems, their transport properties are controlled by a depletion layer, which can be intrinsically formed at their interfaces against a metallic layer with the thickness between a few nm (e.g., InAs) and a ...
The contributions of researchers at a global level in the journal Electronics in the period 2012–2020 are analyzed. The objective of this work is to establish a global vision of the issues ...